- Schottky space-charge zone
- пп область объёмного заряда Шотки
English-Russian electronics dictionary .
English-Russian electronics dictionary .
Field electron emission — It is requested that a diagram or diagrams be included in this article to improve its quality. For more information, refer to discussion on this page and/or the listing at Wikipedia:Requested images. Field emission (FE) (also known as field… … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… … Wikipedia